Dual n Channel Enhancement Mode MOSFET STN6335
is the dual N-Channel enhancement mode power field effect Transistor
which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer Circuits
where high-side switching, low in-line power loss and resistance to transients are needed.