Dual N Channel Enhancement Mode Mosfet

  Dual n Channel Enhancement Mode MOSFET STN6335 is the dual N-Channel enhancement mode power field effect Transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer Circuits where high-side switching, low in-line power loss and resistance to transients are needed.
Item: STN6335
File Size : 107 KB
Pages : 6 Pages

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Stanson Technology Co., Ltd.
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