Dual P Channel Enhancement Mode Mosfet

  Dual P Channel Enhancement Mode MOSFET STP1013 is the P-Channel enhancement mode power field effect Transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer Power Management and other bettery powered Circuits where high-side switching, low in-line power loss, and resistance to transients are needed.
Item: STP1013
File Size : 39 KB
Pages : 7 Pages

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Stanson Technology Co., Ltd.
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