Dual P Channel Enhancement Mode MOSFET STP1013
is the P-Channel enhancement mode power field effect Transistors
are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer Power Management
and other bettery powered Circuits
where high-side switching, low in-line power loss, and resistance to transients are needed.