P Channel Enhancement Mode Mosfet

  P Channel Enhancement Mode MOSFET STP3467 I ne bi HJ4b/ is tne H-cnannei ennancement mode power neia effect Transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer Power Management and other Battery powered Circuits and low in-line power loss are needed in a very small outline surface mount package.
Item: STP3467
File Size : 103 KB
Pages : 6 Pages

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Stanson Technology Co., Ltd.
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