P Channel Enhancement Mode MOSFET STP3467
I ne bi HJ4b/ is tne H-cnannei ennancement mode power neia effect Transistor
which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer Power Management
and other Battery
and low in-line power loss are needed in a very small outline surface mount package.